The stress induced by the capping electrode is critical to stabilizing the ferroelectric phase in Si-doped HfO2 which is being actively explored for embedded non-volatile memory applications. While TiN is commonly used as the electrode of choice owing to its thermodynamic stability with HfO2. its work function (WF) (=4. 8eV) results in reduced memory window (MW). https://www.spidertattooz.com/